[Device Part1] High-k Metal Gate (HKMG)

1. 通过CVD淀积ILD层。 2. 通过CMP进行ILD平坦化。 3. 通过光刻和干法刻蚀去掉NMOS的多晶硅栅极 ...

... (Process Flow)改變，即從原先的Gate-first製程修改成Gate-last製程(如下圖)。但HKMG的手工藝技術又有細分為兩種，Intel在2009年發表了新的製程技術。

This article will summarize the principle of the HKMG process and how this technology was applied to the LPDDR5X and LPDDR5T.

The two common process flows to pattern the HKMG stack are gate-first and gate-last. The gate-first HKMG process is very sensitive, as the capping metal ...

The HKMG process, now introduced by the Graphenea Foundry, simultaneously resolves both gate leakage and individual addressing of GFETs, enabling further ...

Use of the reference flow allows designers to gain performance, power efficiency and chip density advantages while achieving predictable design ...

In this paper, pMOSFETs featuring atomic layer deposition (ALD) tungsten (W) using SiH4 and B2H6 precursors in 22 nm node CMOS technology were investigated.

... HKMG Process in FinFET: Implementing replacement gate technologies and drive-in anneals for Vt refinement. [1:09:00] Visualizing Vt Flavors ...